2SC3127, 2sc3128, 2sc3510 silicon npn epitaxial ade-208-1080a (z) 2nd. edition mar. 2001 application uhf/vhf wide band amplifier outline 1 2 3 1. emitter 2. base 3. collector mpak 2SC3127 note: marking for 2SC3127 is ?d.
2SC3127, 2sc3128, 2sc3510 2 1. base 2. emitter 3. collector to-92 (2) 2sc3128, 2sc3510 3 2 1 absolute maximum ratings (ta = 25?) item symbol 2SC3127 * 1 2sc3128 2sc3510 unit collector to base voltage v cbo 20 20 20 v collector to emitter voltage v ceo 12 12 12 v emitter to base voltage v ebo 33 3v collector current i c 50 50 50 ma collector power dissipation p c 150 350 600 mw junction temperature tj 150 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 ?5 to +150 c
2SC3127, 2sc3128, 2sc3510 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 20v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 12v i c = 1 ma, r be = emitter cutoff current i ebo 10 m av eb = 3 v, i c = 0 collector cutoff current i cbo 0.5 m av cb = 12 v, i e = 0 dc current transfer ratio h fe 30 90 200 v ce = 5 v, i c = 20 ma collector output capacitance cob 0.9 1.5 pf v cb = 5 v, i e = 0, f = 1 mhz gain bandwidth product f t 3.5 4.5 ghz v ce = 5 v, i c = 20 ma power gain pg 10.5 db v ce = 5 v, i c = 20 ma, f = 900 mhz noise figure nf 2.2 db v ce = 5 v, i c = 5 ma, f = 900 mhz maximum collector dissipation curve 600 400 200 0 50 100 150 200 ambient temperature ta ( c) collector power dissipation pc (mw) 2sc3510 2sc3128 2SC3127 dc current transfer ratio vs. collector current collector current i c (ma) 1 2 5 10 20 50 100 0 40 80 120 160 200 dc current transfer ratio h fe v ce = 5 v
2SC3127, 2sc3128, 2sc3510 4 gain bandwidth product vs. collector current 0 1.0 2.0 3.0 4.0 5.0 collector current i c (ma) gain bandwidth product f t (ghz) 12 51020 50 v ce = 5 v f = 500 mhz collector output capacitance vs. collector to base voltage collector output capacitance c ob (pf) collector to base voltage v cb (v) 0 0.4 0.8 1.2 1.6 2.0 12 51020 50 f = 1 mhz i e = 0 reverse transfer capacitance c re (pf) collector to base voltage v cb (v) 0 0.4 0.8 1.2 1.6 2.0 12 51020 50 reverse transfer capacitance vs. collector to base voltage f = 1 mhz emitter common power gain and noise figure vs. collector current power gain pg (db) noise figure nf (db) collector current i c (ma) 0 4 8 12 16 20 0 1020304050 v ce = 5 v f = 500 mhz pg nf
2SC3127, 2sc3128, 2sc3510 5 power gain and noise figure vs. collector current power gain pg (db) noise figure nf (db) collector current i c (ma) 2 4 6 8 10 12 0 1020304050 v ce = 5 v f = 900 mhz pg nf 2nd i.m. distortion 2nd i.m.d. (db) collector current i c (ma) 20 30 40 50 60 70 0 1020304050 2nd i.m. distortion vs. collector current v cc = 12 v f 1 = 210 mhz, f 2 = 200 mhz v out = 100 db m f 2nd = 410 mhz 2nd i.m. distortion 2nd i.m.d. (db) collector current i c (ma) 20 30 40 50 60 70 0 1020304050 2nd i.m. distortion vs. collector current v cc = 12 v f 1 = 600 mhz, f 2 = 650 mhz v out = 100 db m f 2nd = 1,250 mhz 3rd i.m. distortion 3rd i.m.d. (db) collector current i c (ma) 30 40 50 60 70 80 0 1020304050 3rd i.m. distortion vs. collector current v cc = 12 v f 1 = 210 mhz, f 2 = 200 mhz v out = 100 db m f 3rd = 190 mhz, 220 mhz f = 190 mhz f = 220 mhz
2SC3127, 2sc3128, 2sc3510 6 3rd i.m. distortion 3rd i.m.d. (db) collector current i c (ma) 20 30 40 50 60 70 0 1020304050 3rd i.m. distortion vs. collector current v cc = 12 v f 1 = 600 mhz, f 2 = 650 mhz v out = 100 db m f 3rd = 550 mhz, 700 mhz f = 550 mhz f = 700 mhz noise figure vs. frequency noise figure nf (db) frequency f (mhz) 0 2 4 6 8 10 400 500 600 700 800 900 nf post amp. nf v cc = 12 v i c = 20 ma
2SC3127, 2sc3128, 2sc3510 7 power gain vs. frequency power gain pg (db) frequency f (mhz) 0 2 4 6 8 10 1,000 750 500 250 v cc = 12 v, i c = 20 ma input power level ?0 dbm power gain vs. frequency power gain pg (db) frequency f (mhz) 0 2 4 6 8 10 1,000 750 500 250 v cc = 12 v input power level ?0 dbm i c = 30 ma i c = 20 ma i c = 10 ma i c = 5 ma
2SC3127, 2sc3128, 2sc3510 8 input and output reflection coefficient vs. frequency input and output reflection coefficient ? s 11 ? & ? s 22 ? (db) frequency f (mhz) ?0 ?0 0 ?5 1,000 750 500 250 0 ? v cc = 12 v, i c = 20 ma input power level ?0 dbm ? s 22 ? ? s 11 ? vhf to uhf wide band amp. circuit 470 50 p 50 p 2.4 k 50 p 5 p 1,200 p output input rg = 50 w l 1 l 2 t 1 r l = 50 w 1.2 p 4,400 p 4,400 p 2,200 p 110 v bb v cc 2.5 p unit r : w c : f parts spcecification l 1 : inside dia f 3.0 mm, f 0.4 mm polyurethane coated copper wire 12 turns. l 2 : inside dia f 3.5 mm, f 0.5 mm polyurethane coated copper wire 9 turns. t 1 : balance wind used ferrite core outside dia f 4.0 mm, inside dia f 2.0 mm f 0.1 mm polyurethane coated copper wire 3 turns. ratio input to output is 2 : 1
2SC3127, 2sc3128, 2sc3510 9 package dimensions 0.16 0 ?0.1 + 0.10 ?0.06 0.4 + 0.10 ?0.05 0.95 0.95 1.9 0.2 2.95 0.2 2.8 + 0.2 ?0.6 0.65 1.5 0.15 0.65 1.1 + 0.2 ?0.1 0.3 hitachi code jedec eiaj mass (reference value) mpak conforms 0.011 g as of january, 2001 unit: mm
2SC3127, 2sc3128, 2sc3510 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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